POAM Electronics designs and manufactures: • Tracking Antennas (3 m to 12 m), high-speed systems for LEO, MEO, and fast-moving objects • Radio & Solar Telescopes (3 m to 12 m), from L-band to Ka-band • Military-Standard Solid State Power Amplifiers (SSPA), pulsed and wideband, 20 MHz to 40 GHz, 100 W to 5 kW All systems are engineered and manufactured in the United Kingdom.

We supply tracking antennas in diameters from 3 metres to 12 metres. These systems are designed for: • LEO satellite tracking • MEO and fast-moving objects • High-acceleration tracking profiles • Space situational awareness • Defence and telemetry applications Custom structural and servo configurations are available depending on wind loading, slew rate, and pointing accuracy requirements.

Our radio and solar telescopes operate from: • L-Band • S-Band • C-Band • X-Band • Ku-Band • Ka-Band System performance depends on feed configuration, surface accuracy, and environmental conditions. We provide full RF chain integration including feeds, receivers, and control software.

Our GaN Solid State Power Amplifiers (SSPA) are: • Frequency range: 20 MHz to 40 GHz • Output power: 100 W to 5 kW • Available in CW, pulsed, and wideband configurations • IP67 outdoor, standalone systems • Military-grade mechanical construction Designed for: • Electronic warfare • Jamming systems • Milcom • High-power RF test environments • Radar systems All SSPAs are built for continuous outdoor operation in harsh environm

Our SSPA platforms are built to military mechanical and environmental standards. Compliance level depends on project requirements. We can design systems aligned with: • MIL-STD environmental specifications • Ruggedised outdoor IP67 operation • Custom shock, vibration, and thermal profiles Full qualification matrices can be provided during procurement discussions.

Yes. Most of our projects are application-specific. We provide: • Custom RF design • Structural and thermal engineering • Servo and motion control customisation • Integrated system architecture • Software adaptation We manage the full lifecycle, from concept to commissioning.

Yes. We provide on-site installation and commissioning worldwide. Services include: • Mechanical assembly • RF calibration • Servo tuning • Acceptance testing • Training Travel and installation scope are defined per contract.

All systems include: • 1-year standard warranty • Extendable to 3 years Extended warranty packages can include: • Preventative maintenance support • Spare parts packages • Remote technical assistance Warranty terms are clearly defined in the purchase agreement.

All core systems are designed and manufactured in the United Kingdom. We maintain strict engineering control, quality inspection, and traceability for critical components.

You can contact us via the website contact form or email. For faster processing, include: • Application type • Frequency range • Required power level • Environmental conditions • Target deployment location • Required timeline Our engineering team will respond with a technical consultation and proposal.

Yes. POAM Electronics designs custom RF power amplifiers based on: • Frequency range • Required output power • Duty cycle • Thermal constraints • Environmental conditions We engineer mechanical, thermal, and RF performance as a single integrated system.

A military-standard Solid State Power Amplifier (SSPA) is a rugged, high-power RF amplifier designed for harsh environments and mission-critical systems. POAM wideband and pulsed SSPAs feature: • Frequency range: 20 MHz to 40 GHz • Output power: 100 W to 5 kW • CW, pulsed, and wideband configurations • IP67 weatherproof outdoor housings • Stand-alone operation Typical applications: • Electronic warfare systems • Jammers • Radar platforms • Military communications • High-power RF testing

IP67 means the amplifier enclosure is: • Completely protected against dust • Protected against temporary immersion in water For defence and outdoor telecom installations, this ensures reliable operation in rain, sand, and extreme environments.

Lead time depends on several technical factors, including: • Antenna size • Frequency band • Power level • Scope of custom engineering and testing Standard configurations typically ship within several weeks, while fully customized solutions may require several months, depending on design complexity and validation requirements. For an accurate timeline, please share your technical specifications and performance requirements.

To request a quotation, please fill the request form or send an email to sales@poamelectronics.com (mailto:sales@poamelectronics.com)and provide: • Application type • Frequency range • Required output power • Deployment location • Environmental conditions • Target delivery timeline Our engineering team will review your requirements and provide a technical proposal.

Yes. Our SSPAs are designed for: • Electronic warfare systems • Radar transmit chains • Jammers • Military communications • High-power RF test platforms Mechanical and environmental ruggedisation can be aligned with defence standards depending on project requirements.

An antenna-mounted RF amplifier is installed directly at or near the antenna to: • Reduce RF cable losses • Improve system efficiency • Increase effective radiated power • Minimise transmission losses at high frequencies such as Ka-band This configuration is common in radar, EW, and satellite uplink systems.

A LEO tracking antenna system is a high-speed azimuth-elevation antenna designed to follow fast-moving Low Earth Orbit satellites in real time. POAM systems range from 3m to 12m diameter and are engineered for: • LEO and MEO satellite tracking • Space situational awareness • TT&C ground stations • Aerospace research • Defence space programmes

LEO satellites move significantly faster than GEO satellites. Key engineering requirements include: • High slew rate capability • Rapid acceleration and deceleration control • Precise pointing accuracy • Stable servo control loops • Structural rigidity under wind loading Failure in any of these areas results in signal loss.

Fact: GaN devices offer higher power density and improved efficiency compared to traditional LDMOS. Engineering reasoning: • Higher breakdown voltage • Better thermal performance • Wider bandwidth capability • Reduced system size for equivalent output power Where risk exists: Thermal management and RF stability must be properly engineered. Poor mechanical design can negate GaN advantages. Always evaluate full system design, not just transistor technology.